Semiconductor

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【New】NanoSIMS: High Sensitivity Imaging Analysis for Devices

Nanoscale Secondary Ion Mass Spectroscopy (NanoSIMS) is a unique analytical method which combines the extremely high sensitivity and mass resolution of SIMS with an improved optical design that facilitates high lateral resolution (as low as 50 nm): up to 50 times greater than conventional SIMS. This facilitates targeting of microscopic grains and structures in materials and devices, enabling the use of SIMS analysis in previously inaccessible sample types. Beyond point-analysis on these features, NanoSIMS can also yield high-resolution imaging analysis that allows experts to profile and map elemental distribution.

Advanced techniques based on TEM for the characterization of SiC and GaN power semiconductor devices - carrier distribution, interface structure, crystal defect -

This movie introduces the characterization of SiC and GaN power semiconductor devices, carrier distribution, interface structure, crystal defects, etc., using advanced analytical techniques based on TEM. This was presented at iCSMD in 2021.

Crystal phase analysis of Hf1-xZrxO2 thin film. -for the improve of dielectric properties-

HZO (Hf0.5Zr0.5O2) has been attracting attention for memory applications because it shows ferroelectricity even in the thin film state. Among the possible crystalline phases, only the orthorhombic phase exhibits ferroelectricity, so understanding the crystalline phase it contains will lead to an understanding of its dielectric properties. In this movie, we introduce an example of the evaluation of the crystalline phase ratio of HZO thin film using ACOM-TEM.

Evaluation techniques for thin films by non-destructive analysis methods

In recent years, semiconductor materials have become thinner and thinner and have been precisely controlled at the atomic layer level, and there is a need for more accurate methods to evaluate the slight differences in film quality and interfaces. In this movie, we will introduce a case study of the changes in Al2O3 thin film before and after heat treatment, using a non-destructive analysis method to approach the problem from various angles.

fs LA-ICP-MS analysis of impurities in hard-to-digest samples

In conventional ICP-MS method, samples need to be dissolved in solution and it is difficult to applying this method to acid-insoluble materials such as wide-bandgap semiconductors. To solve this problem, we introduced Femtosecond LA-ICP-MS (fsLA-ICP-MS) and acquire an ability to analyze trace elements in hard-to-digest samples.

Direct observation of Si crystallization process and crystal orientation analysis by in-situ heating TEM and ACOM-TEM

We introduced a new in-situ heating TEM holder and investigated the crystal-growth mechanism of an amorphous Si (a-Si) film at the identical position with a spatial resolution of nm level, combining in-situ heating TEM and ACOM-TEM techniques. As an example, we explain investigations of the grain growth of a-Si film on SiO2 during annealing process and the crystal orientation of a poly-Si film after annealing.

Evaluation of semiconductor materials using evolved gas analysis Technical Documents

This presentation summarizes the collection and detection methods used to evaluate the evolved gas. The optimal collection and detection methods vary depending on the component. Now, we would like to introduce examples of on-line evolved gas analysis by TDS and TPD-MS, and analysis of trace components using GC/MS.

Analytical Technologies of Advanced Packages interconnection and Joint Quality

Advanced packages become more complexity by putting the heterogeneous devices into the integration. So, reliability at the interconnection in a package is very critical to ensure the package quality. In this movie, Dr. Endo, our researcher will present the analytical and evaluation technologies for the joint reliability and interconnection layers. He will introduce the material property analysis methods and several examples of analysis results using material property analysis and morphological analysis (3D-SEM and EBSD).

High Precision Film Quality Analysis of SiN Films by Mercury Probe and XPS

We would like to introduce an example of electrical characterization (C-V, I-V) by mercury probe method and compositional and chemical state evaluation by XPS for SiN film. Our high precision measurement by mercury probe method and XPS enables us to detect small changes in electrical properties and composition/chemical state of SiN film. In addition, by using etching in XPS, we were able to comprehensively evaluate the SiN film from the top surface to the SiN/Si interface. The obtained electrical properties and the results of physical analysis were analyzed in a complementary manner to estimate the factors responsible for the improvement of electrical properties.

Impurity analysis of small area using NanoSIMS 50L

NanoSIMS has an extremely high spatial resolution compared to conventional SIMS, making it possible to evaluate the distribution of elements at low concentrations with a field of view comparable to SEM-EDX or EPMA. This feature is expected to expand the world of elemental distribution analysis in minute areas such as actual devices. Here, we introduce an example of evaluating oxygen precipitates in Si wafers and dopant distribution in SiC-MOSFETs.

Evaluation of semiconductor materials by FT-IR

Infrared spectroscopy is a highly sensitive and accurate method for qualitative and quantitative evaluation of not only organic materials such as polymers, but also the structure of insulating films used in semiconductors and impurities in Si substrates. Here, we introduce some examples of evaluation of various materials using transmission method, multiple reflection ATR method, step etching + transmission method, and low temperature FT-IR.

Evaluation of defects in semiconducter - thin-film by ESR spectoroscopy

ESR (Electron Spin Resonance) is a spectroscopic method for detecting "unpaired electrons" in materials. It is a method that can be applied to a wide range of fields, both organic and inorganic, and we have a wealth of analytical experience and measurement know-how. In this section, we will introduce ESR analysis of the amount of defects in semiconductor thin films, which affect electrical properties.

Process damage evaluation using low-energy Cathodoluminescence(CL) method

Cathodoluminescence (CL) is an emission spectroscopy method using electron beam excitation. It has higher spatial resolution than microphotoluminescence (PL) and can be applied to wide bandgap semiconductors. In this video, we will introduce the evaluation of GaN dry etching process and the evaluation of crystal defects in GaN HEMT devices by cross-sectional CL method.

Stress and crystallinity evaluation of advanced power devices by Raman spectroscopy

Raman spectroscopy is a method to quantitatively evaluate residual stress in real devices. While it is a relatively simple measurement method, a correct understanding of Raman scattering theory is required for interpretation. In this video, we will introduce a case study of evaluating the stress temperature dependence of GaN HEMT packages.