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OLED
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Wide-area SEM observation of OLED display panel using plasma FIB
Focused ion beam by gas plasma ion (PFIB) has an advantage in beam current compared to conventional Ga-ion FIB, so that it enables to get a wider cross-section with the order of several 100 micro-maters. The cross-sectional SEM observation of an OLED display with wide-view gives us a lot of information.
P02577_Wide-area SEM observation of OLED display panel using plasma FIB.pdf
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Identification of Dopant Ratio in Organic EL Device
In OLED devices, dopant ratios have a significant effect on luminescence efficiency, color purity, and lifetime. In the case of co-deposition, films are not always deposited at the same ratio as the preparation, depending on the characteristics of the compound. In this report, we present an example of Identification of the dopant ratio in an OLED film with and without standard materials (SMs).
P02418_Identification of Dopant Ratio in Organic EL Device.pdf
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Property evaluation of OLED layers in Solution process and Vacuum deposition process
We compared film properties of OLED layers deposited by solution process and vacuum deposition process in spectroscopic ellipsometry and X-Ray reflectivity (XRR). We revealed the difference of optical properties, such as refractive index, surface layer on vacuum deposited sample.
P02389_Property evaluation of OLED layers in Solution process and Vacuum deposition process.pdf
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Impurity Analysis in Solution-processed OLED by TOF-SIMS
We performed depth profiling of impurities by GCIB-TOF-SIMS and detailed qualification of impurities by MS/MS in TOF-SIMS as comparison of OLED layers deposited by solution process and vacuum deposition process. Impurities on interface and surface were observed in solution-processed OLED.
P02388_Impurity Analysis in Solution-processed OLED by TOF-SIMS.pdf
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Composition and density analysis in OLED devices using micro-RBS
We have the world’s first introduced a high spatial resolution RBS system. Accurate composition and density evaluation of small area can be realized by using High energy micro-ion-beam. The composition and density analysis of the IGZO layer in the flexible OLED device and Ir quantification in the emission layer are shown.
P02313_Composition and density analysis in OLED devices using micro-RBS.pdf
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Prediction of emission wavelength in Ir complexes for organic EL materials using quantum chemical calculations
We performed quantum chemical calculations on Ir complexes for organic EL materials and accurately predicted the difference of emission wavelength between the structural isomers. From this result, it is possible to determine the ligand structure by confirming the agreement between the experimental emission wavelength and calculated one, or to predict the emission wavelength of the product denatured by deterioration etc.
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Detailed structural analysis of compounds containing heteroatoms -Analysis of OLED materials-
2D NMR measurements using hydrogen and carbon nucler are often used for detailed structural analysis of organic compounds, but when the structure contains heteroatoms, structural information may not be sufficiently obtained. Here, we introduce an example in which 2D NMR measurements using multinuclear are effective for detailed structural analysis of OLED materials.
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Determination of multilayer structure of OLED by cross-sectional TEM
Organic layers with similar composition can be distinguished by TEM with our original contrast enhancement. By cross-sectional TEM-EDX of the defect which was found in surface SEM, we can reveal the detailed structure and the composition of it.
P01963_Determination of multilayer structure of OLED by cross-sectional TEM.pdf
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Photoluminescence(PL) analysis of EMLs in multilayered OLEDs
We have developed a method which enables to separate each PL signals in multilayered OLEDs. Pure PL spectra of each EMLs can be obtained by using a precise etching technique and a difference-spectrum method.
P01764_Photoluminescence(PL) analysis of EMLs in multilayered OLEDs.pdf
OLED degradation analysis
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Degradation analysis of p-i-n type OLED
We have developed a method which enables to separate each PL signals in multilayered OLEDs. Pure PL spectra of each EMLs can be obtained by using a precise etching technique and a difference-spectrum method.
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TOF-SIMS MS/MS or analysis of degradation product in OLED driving test
PL line analysis, GCIB-TOF-SIMS, and TOF-SIMS MS/MS were applied to the degradation analysis of OLED in driving test. TOF-SIMS MS/MS revealed the detailed chemical structure of degradation product in the specific depth region in OLED stacks.
P01964_TOF-SIMS MS/MS or analysis of degradation product in OLED driving test.pdf
TFT
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SEM,EDX and SCM evaluation of IGZO-TFT
Amorphous IGZO (In-Ga-Zn-O) semiconductor has been researched and developed as an one of candidates for next-generation TFTs and other electronic devices because of its excellent properties such as high channel mobility and low leakage current. We introduce a case study of the morphological observation and carrier distribution of IGZO-TFT cross sections of commercial products using SEM-EDX and SCM.
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Electronic structure of a-IGZO and a-IGZO/metal interface structure in a TFT device
IGZO (InGaZnO) with high electron mobility has been used in many kinds of electronic devices. We characterized elemental composition distribution and electronic structure of a-IGZO with nano-spatial resolution to consider the roles of IGZO at different locations in structured TFT device.
P02187_Electronic structure of a-IGZO and a-IGZO/metal interface structure in a TFT device.pdf
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Precise evaluation for SiN films by mercury probe and XPS
Silicon nitride (SiN) films are widely used as various dielectrics due to their versatility. But the electrical properties of SiN films strongly depend on the formation conditions. We characterized the change in the electrical and physical properties of annealed SiN film by mercury probe and XPS. Our comprehensive study enables us to evaluate a relationship between film qualities and electrical properties of SiN films.
P02273_Precise evaluation for SiN films by mercury probe and XPS.pdf
QD-LED
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Degradation analysis of QLED device
QD-LED (QLED) devices have emissive layer of quantum dots (QDs), and are one of the most promising next-generation electroluminescent devices. We analyzed fresh and degraded QLED devices and attempted to reveal the cause of the luminance decay for the degraded device.
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Evaluation of the QD sheet by SEM-EDX analysis and quantitative image analysis
About QD (quantum dot) sheet used for the backlight of the liquid crystal display, we developed technique to get the layer structure and the elemental information by SEM-EDX analysis. By special cross-section processing technique and the high efficiency EDX detector, we are able to ofer the various quantitative information such as the particle diameter and the distribution.
P02169_Evaluation of the QD sheet by SEM-EDX analysis and quantitative image analysis.pdf
uLED
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Defect analysis of micro-LED with sub-µm level
Cathodoluminescence (CL) is a unique technique that combines electron microscopy and spectroscopic analysis. CL can evaluate point defects of semiconductor chips with high sensitivity and high spatial resolution. CL is a very effective method for evaluating micro-sized LEDs.
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Analysis for manufacturing technology of micro LED - Optimization of laser transfer conditions -
In the manufacturing process of micro LED displays, the laser process is very effective for accurate and fast transfer of micro chips. However, it is necessary to select the appropriate laser wavelength and energy for high-precision transfer. We introduce analysis methods that can evaluate surface contaminations and damage in order to select optimal process conditions.
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Process optimization and failure analysis of Micro-LEDs and Mini-LEDs
Analysis technologies such as cathodoluminescence (CL) and Raman spectroscopy are usefulfor Micro-LEDs and Mini-LEDs, which will be adopted in the next generation displays. Especially, our technologies are effective for process optimization and failure analysis.
P02292_Process optimization and failure analysis of Micro-LEDs and Mini-LEDs.pdf
LCD and foreign materials
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Do you have any trouble in LCD panel?
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Composition analysis of foreign substances by optical-photothermal IR spectroscopy (O-PTIR)
Optical-photothermal IR spectroscopy (O-PTIR) enables to obtain infrared spectra in non-contact manner with about 1um spatial resolution. We applied O-PTIR to analyze small foreign substances which were impossible to be analyzed with conventional micro FT-IR because of their position and mechanical properties.
Optical film
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Qualitative analysis of surface functional layers on optical film by GCIB-TOF-SIMS
GCIB (gas cluster ion beam)-TOF-SIMS provides us depth distribution of organic components with depth resolution of several nanometers. Qualitative analysis of thin surface functional layers of optical films, which is difficult on cross-sectional imaging, was successfully carried out.
P02523_Qualitative analysis of surface functional layers on optical film by GCIB-TOF-SIMS.pdf
Collaboration
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Effective and new solutions for R&D of organic electronics
Toray Research Center (TRC) has built the business alliance with OPERA Solutions Inc. to provide a wide range of solutions for R & D in organic electronics. TRC and ORERA solutions can help our customers solve their problem, with our expertise in OLED material / device physics / manufacturing equipment / instrumental analysis.
Effective_and_new_solutions_for_R&D_of_organic_electronics.pdf