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Ion Implantation
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Distribution of Impurities in semi-conductor device by NanoSIMS
NanoSIMS is specialized technique for imaging with high lateral resolution of ～50-200nm with high sensitivity. Furthermore, depth profiling can also be conducted using primary beam with higher current density enough to sputter up to an interested depth of sample.
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Characterization of defects generated by ion-implantation by cathodoluminescence
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Ion Implantation Services in TRC
Aluminum, Beryllium, Iron, Copper and Potassium are new lineups.
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Low beam energy Ion Implantation