LED
- Analysis methods of LED components
- The optimal analytical methods are possible based on various LEDs characteristic even for a phosphor, a package, and a product from a light-emitting device. TechData_P01081E (PDF:77KB)
- Failure Analysis Techniques for Semiconductor Devices
- Physical and chemical analysis techniques are widely used for semiconductor failure analysis. The analysis of "invisible defects" is becoming important because of the requirement of high-level reliability. TechData_P00989E (PDF:365KB)
- Depth profiles and Imaging of impurities on LED epitaxial layers by TOF-SIMS
- Accurate depth profiling and imaging analysis can be achieved by using the function of high mass resolution of TOF-SIMS. Furthermore TOF-SIMS enables to acquire depth profiles with good depth resolution and imaging with good spatial resolution as shown below. TechData_P01100E (PDF:195KB)
- High sensitivity depth profiling of H, C and O in III-V compound semi-conductor by specialized TOF-SIMS
- Detection limits have enormously improved by customizing new TOF-SIMS instrument and developing analytical condition. The detection limit of H, C and O has reached to 1017atoms/cm3 level. TechData_P01240E (PDF:188KB)
- SIMS Analysis of Dopants in GaN LED
- A novel GaN-based LED was analyzed with dynamic SIMS equipped with two ion sources: Cs+ and O2+. The Cs+ primary ions can offer quantification of AlN mole fraction in AlxGa1-xN layers with high depth resolution, whereas the O2+ ions provide high sensitivity for Mg with no mass interferences. In addition, the simultaneous detection of both Mg and Si was achieved with the use of O2+ primary ions. TechData_P01083E (PDF:147KB)