LSI, IC & Memory

NanoSIMS Analysis of 3D NAND Flash Memory
The NanoSIMS 50L can provide the highest lateral resolution among secondary ion mass spectrometry and can simultaneously achieve high detection sensitivity and high mass resolution. Here, we introduce examples of measuring 3D NAND flash memory using TOF-SIMS and NanoSIMS. TechData_P01975E (PDF:1.0MB)
Pore size evaluation by positron annihilation lifetime spectroscopy
Positron annihilation lifetime spectroscopy (PALS) is a measurement method for sub-nm ~ nm scale pore size distribution of polymer, inorganic, semiconductor, metal etc.. Positron beam equipment is useful for thin films on substrates as well as bulk materials. TechData_P01159E (PDF:309KB)
Structure analysis for three-dimensional latest devices
TEM Tomography is the method can reveal 3-dimensional shape, so indispensable to the structure analysis of latest devices in which scaling and 3-D stacking coexist. In addition, combination of Cs-STEM enable to analyze the structure of gate stacks of the device at sub-nm level. TechData_P01054E (PDF:1,548KB)
Structural analysis of photoresist at boundary area in resist pattern
It is very important for further miniaturization of semiconductor devices to investigate correlation between chemical structure of resist and Line Width Roughness (LWR). In this study, a novel sampling technique and Pyrolysis-GC/MS combined with micro-GPC enable usto analyze chemical structures of resist pattern in detail. TechData_P01181E (PDF:315KB)
Characterization of defects generated by ion-implantation by cathodoluminescence
TechData_S00263E (PDF:235KB)
Defect-characterization in semiconductor devices by Cathodoluminescence (CL)
Cathodoluminescence is a emission of light as a result of electron bombardment.“ Cathodoluminescence (CL) spectroscopy " is a powerful method for evaluate defects in semiconductor devices. We introduce some applications of CL analysis to various materials and devices (Si, SiC, Diamond, GaN). TechData_P00346E (PDF:447KB)
Evaluation of optical properties using spectroscopic ellipsometry
TechData_P01107E (PDF:389KB)
Stress characterization by Raman spectroscopy
TechData_S00262E (PDF:131KB)
Stress evaluation of TSVs by Raman spectroscopy
Raman scattering is the inelastic scattering of light. TechData_S00261E (PDF:235KB)
Electrical Characterisation of materials by Mercury Probe Capacitance Voltage Measurement (MCV)
TechData_T00134E (PDF:198KB)
Depth profiling of carrier density in SiC epi-wafer by MCV
TechData_T00137E (PDF:378KB)
H and D Depth Analysis by HFS/DFS
Using recoil scattering by high energy ion beam, deuterium depth profile can be acquired. Scattered deuterium can be detected simultaneously at RBS / HFS measurement, so accurate composition and depth profile, including hydrogen and deuterium can be evaluated. using m -size ion beam, this method can also be applied to small areas (~100mm x 400mm). TechData_P01015E (PDF:136KB)
Measurement of water diffusion into sealing layer
For evaluation of water sealing layer, we provide water diffusion measurement service using heavy water (D2O) treatment and Secondary Ion Mass Spectrometry (SIMS). This service is applicable to organic sealing layer also. TechData_P01138E (PDF:265KB)
SiN depth profile using ion scattering
Using ion scattering, as typified by RBS, depth profile can be acquired for thin films with various thickness, from ultrathin to thick films. High accurate composition including hydrogen can be obtained. Here depth profile of ultrathin SiN film, and RBS / HFS / NRA combination analysis of SiN film including carbon are presented below. TechData_P01108E (PDF:385KB)
SRA: Spreading Resistance Analysis (Two-Point Probe system)
Spreading Resistance Analysis (SRA) is a technique used to analyze resistivity versus depth in semiconducting samples as a function of position. Two metal probes spaced about 20μm apart are pressed against the bevel surface of the semiconductor and the resistance between these probes is measured. TechData_P00413E (PDF:1,014KB)
Evaluation of the interfacial structure of a SiO2 thin film on a Si substrate
The physical and chemical structure at the interface of SiO2 thin films is known to be closely related to the electrical properties of semiconductor devices. We can provide various analytical techniques (AFM, EPR, FT-IR, TEM-EELS, etc.) for the evaluation at the interface between SiO2 and Si substrate. TechData_P01140E (PDF:537KB)
Depth profiling of impurities in the small patterned Si by highly sensitive TOF-SIMS
We measured the depth profiling of impurities in the small area of 15 μm or less than 10 μm width, using highly sensitive TOF-SIMS. TOF-SIMS is a powerful technique to be able to obtain some information about the depth profiling of impurities in the small patterned Si devices. TechData_P01266E (PDF:614KB)
Least noise-floor AFM in the world ! Roughness analysis of wafers by AFM
In Toray Research Center, Inc., least noise-floor level in AFM measurements can be achieved by the high-performance active-type anti-vibration table and the converted measurement room with noise reduction. As a result, it is possible to estimate accurate quantitative values of roughness and discriminate the slight difference of them. TechData_P01078E (PDF:343KB)
Water content measurement using Karl Fischer method, TPD-MS and GC
To obtain a reliable water content, Karl Fischer (KF) method, Temperature Programmed Desorption - Mass Spectroscopy (TPD-MS) and Gas chromatography (GC) can be applied. It is important to select an appropriate method depending on sample features (e.g. size, composition or state). TechData_P00856E (PDF:318KB)
3D characterization of MTJ device by STEM-tomography
STEM tomography is one of effective techniques to characterize of MTJ (Magnetic Tunnel Junction) device. Using STEM-tomography, 3D morphology and 3D composition distribution of the whole MTJ device can be Visualized/quantified and discussed in more detail compare to conventional 2D observation. TechData_P01984E (PDF:576KB)
Study on HfO2/GeO2 interfacial reaction in Ge-MOS devices
Germanium (Ge) is expected to be an alternative material for high performance MOSFET due to its higher carrier mobility than silicon (Si). However, the deposition of HfO2 film on Ge degrades the electrical properties of MOSFET. In this study, we investigated the HfO2/GeO2 interfacial reaction and thermal diffusion of the atoms to obtain the guideline for electrical improvement. TechData_P01801E (PDF:583KB)
in-situ heating TEM observation during crystallization of amorphous Si film
It is important to clarify the structural change during annealing process in semiconductor device manufacturing. Heating behavior of materials can be observed at nm level by in-situ heating TEM. Information about structural change with heating can be utilized for process development. TechData_P01978E (PDF:959KB)
Evaluation of Al2O3 thin films and Al2O3/Si interfaces
Al2O3 film has the characteristics of chemical stability and good insulating property. Therefore, it is well introduced into a lot of semiconductor devices. However, the quality of Al2O3 film easily deteriorates depending on the formation processes. In this study, we investigated the change of chemical states of Al2O3 thin films and Al2O3/Si interfaces by thermal annealing. TechData_P01757E (PDF:352KB)
Cross-section Imaging of the semiconductor memory by NanoSIMS 50L
By using NanoSIMS 50L, cross-section imaging measurements of SRAM were performed. The microstructure of 50-100 nm size observed in cross-section TEM was detected by NanoSIMS 50L with high lateral resolution. The detection of the dopant is expected by optimizing measurement conditions in the future. TechData_P01890E (PDF:461KB)
Strain Analysis at nano-meter region using ASTAR
Information about crystal strain can be extracted from the spatial distribution of precession electron diffraction (PED) patterns. 2-dimensional strain maps with nano-meter spatial resolution using ASTAR in TEM are shown below. TechData_P01985E (PDF:289KB)