NanoSIMS Analysis of Metal Material
The NanoSIMS 50L can provide the highest lateral resolution among secondary ion mass spectrometers and can simultaneously achieve high sensitivity and high mass resolution. Here, we introduce examples of measuring Ti alloy using NanoSIMS. TechData_P02020E (PDF:530KB)
Pore size evaluation by positron annihilation lifetime spectroscopy
Positron annihilation lifetime spectroscopy (PALS) is a measurement method for sub-nm ~ nm scale pore size distribution of polymer, inorganic, semiconductor, metal etc.. Positron beam equipment is useful for thin films on substrates as well as bulk materials. TechData_P01159E (PDF:309KB)
Evaluation of Cu oxides with (S)TEM
Examples of evaluation for oxidation states at nm area with (S)TEM are shown. Chemical states mapping are acquired with composition analysis by EDS (including quantification) and EELS combining with multiple linear least-squares (MLLS) fitting analysis. Crystal structure identification by electron diffraction are also available. TechData_P01144E (PDF:768KB)
XPS analysis using the GCIB etching
The sample damage during the GCIB (Gas cluster ion beam) etching is very small, so depth profile analyses of organic materials are possible by using the GCIB etching. In addition, the GCIB etching is effective as the method of cleaning organic contamination on the inorganic material surface. TechData_P01179E (PDF:189KB)
Crystal orientation map and grain size analysis using ASTAR with nm resolution
In crystal orientation and phase map, spatial resolution of ASTAR* is better than that of SEM-EBSD (Electron Back Scattering Diffraction). Using ASTAR, which has 2 nm resolution, it is possible to analyze fine structure.
* ASTAR is also called ACOM-TEM (Automated crystal orientation map in TEM) in method mane.
TechData_P01695E (PDF:756KB)