Electronic Materials

High Precision and High Sensitivity Analyses of Ceramics by ICP-OES and ICP-MS
Characteristics of ceramics are influenced by its major and impurity elemental contents. We can perform relative comparison of major elemental ratio (Ba/Ti) in BaTiO3 with 3σ of less than 0.4 % by ICP-OES and determination of trace impurities with detection limit of 0.X μg/g by ICP-MS. These services are possible by our accumulated know-how, skillful pretreatment and tuned measurement methods. TechData_P01008E (PDF:292KB)
Analysis of Organic Additives in CMP Slurry
TechData_S00194E (PDF:166KB)
Organic composition analysis
Composition analysis of various chemical products is possible by applying high level separation techniques and appropriate analytical methods with wealth of experiences. A procedure of organic composition analysis and application results on various industrial materials are introduced. TechData_P01011E (PDF:235KB)
Quantitative analysis of trace components in electronic materials with LC/MS/MS
LC/MS/MS is extremely effective for microanalysis of industrial products including electronics devices, because of its high sensitivity and highly selective quantitative capability. The applications to quantitative analysis of the trace components are shown here. TechData_P00178E (PDF:402KB)
Crystal orientation map and grain size analysis using ASTAR with nm resolution
In crystal orientation and phase map, spatial resolution of ASTAR* is better than that of SEM-EBSD (Electron Back Scattering Diffraction). Using ASTAR, which has 2 nm resolution, it is possible to analyze fine structure.
* ASTAR is also called ACOM-TEM (Automated crystal orientation map in TEM) in method mane.
TechData_P01695E (PDF:756KB)
Characterization of grain diameter and crystal orientation in the MEMS devise using ASTAR
It is important to control and estimate crystal grain size and orientation in device design. In PZT (Lead Zirconate Titanate) device (MEMS mirror), the relationship between device property and structure was researched. TechData_P01979E (PDF:253KB)
Strain Analysis at nano-meter region using ASTAR
Information about crystal strain can be extracted from the spatial distribution of precession electron diffraction (PED) patterns. 2-dimensional strain maps with nano-meter spatial resolution using ASTAR in TEM are shown below. TechData_P01985E (PDF:289KB)