- Analytical Techniques Available for OLEDs
- Analytical techniques available for flexible and printed electronics
- Determination of multilayer structure of OLED by cross-sectional TEM
Organic layers with similar composition can be distinguished by TEM with our original contrast enhancement. By cross-sectional TEM-EDX of the defect which was found in surface SEM, we can reveal the detailed structure and the composition of it.
- Structural analysis of OLED components by TOF-SIMS MS/MS
Newly introduced our TOF-SIMS MS/MS provides useful data for detailed molecular structure determination of components in OLED multilayer. It is particularly useful for the analysis of dopants and component of thin layer with a thickness of a few nm.
- Quantification of dopant in phosphorescent OLED device by using GCIB-TOF-SIMS
Generally, EML of OLED device consists of host material and light-emitting molecule doped in low concentration. Concentration of dopant is important parameter because it can affect to efficiency and life time of device. We have developed quantification method and obtained the depth distribution of the dopant concentration in EML by using GCIB-TOF-SIMS.
- Structural analysis of OLED materials
Using high resolution MS and high-sensitivity NMR, we performed the structural analysis of OLED materials. The elemental composition and partial structure were identified by MS and MS/MS measurement. 2D NMR provided the detailed chemical structure including the site of substitution. We were also able to discriminate and quantify the anti and syn isomers.
- Photoluminescence (PL) analysis of EMLs in multilayered OLEDs
We have developed a method which enables to separate each PL signals in multilayered OLEDs. Pure PL spectra of each EMLs can be obtained by using a precise etching technique and a difference-spectrum method.
- Nano-Scale Structural Analysis of Layers and Interfaces in OLED devices
Organic layers with similar composition can be distinguished by TEM with our original contrast enhancement. By TEM-EDX with large-aperture detector, we can observe the thin layers and light elements, which are undetectable by conventional TEM-EDX. GCIB-TOF-SIMS enables depth profiling of organic materials and thus is useful for operational degradation analysis of OLED devices.
- TEM-EDX spectrometry of defective organic electroluminescence devices
The cause of the defect can be investigated by TEM-EDX analysis for the micro defective parts of organic with spectroscopic imaging-EL method.
- TOF-SIMS MS/MS for analysis of degradation product in OLED driving test
PL line analysis, GCIB-TOF-SIMS, and TOF-SIMS MS/MS were applied to the degradation analysis of OLED in driving test. TOF-SIMS MS/MS revealed the detailed chemical structure of degradation product in the specific depth region in OLED stacks.
- Degradation analysis of OLED -Influence of trace level water in accelerated test-
Residual water in OLED device is thought to cause structural change in organic materials, which results in decrease of luminance after long term driving. Using GCIB-TOF-SIMS, we detected the increase in the amount of derivatives from host materials in Emission layer (EML).
- Structural analysis of trace degradation compounds in OLED materials heated under various atmospheres by using LC/HRMSn
It is essential to analyze trace impurity compounds because OLED materials require high-purity quality for longer lifetime, high reliability. LC(Liquid chromatography) separation and acquisition of high-resolution mass spectra enable high accuracy of chemical formula estimation and detailed structural analysis.
- Structural analysis of trace impurity in OLED material by NMR with cryo-cooling probe
It is supposed that the trace impurities (or degradation compounds) in OLED material have a bad influence on the lifetime and emitting properties of OLED. So, it is important to investigate their structures. In this poster, a trace impurity of OLED material was concentrated by HPLC fractionation and analyzed by NMR with cryo-cooling probe.
- Molecular orientation analysis in organic thin films for OLED
Raman and Angle resolved XAFS reveal molecular orientation in organic thin films. Using two modes of XAFS measurement, you can compare top surface vs. bulk of those films.
- Water permeability analysis by D-SIMS
Use of isotope-labeled water, D2O, and D-SIMS enables us to clarify permeated D2O profile after exposure in D2O vapor. This method is promising for evaluating the water permeation behavior both in inorganic films and organic films.
- Evaluation of water permeability in sealants by D-SIMS
Use of isotope-labeled water, D2O, and D-SIMS enables us to clarify permeated D2O profile after exposure in D2O vapor. This method is promising for evaluating the water permeation behavior in organic films.
- Sealing capability measurement using isotope marker
OLED devices, filled with N2 gas and sealed by glass and sealing resin, were forced to deteriorate by immersion into heavy water at 80 °C for a few days. We performed sealing capability measurement on them using TPD-MS and SIMS.
- Enclosed Gas Analysis of Display Panel
TPD-MS (Temperature Programmed Desorption- Mass Spectrometry) is one of the most powerful techniques to analyze of the enclosed gases in a FPD panel. By destroying a panel in an in-house airtight container equipped with a highly sensitive mass spectrometer enables not only qualitative but quantitative analysis of the enclosed gas. Raman spectroscopy is an alternative method for characterization of a small amount of gas. We have developed original sampling method for the measurement of bubbles in a liquid display panel.
- Evaluation of peripheral components of display panels
For display panels, higher specifications are needed not only in the structure of display parts but also in the peripheral parts (sealing, planarization layer, wiring, optical film, touch panel etc.). The analytic menu and SEM observation example are shown below.
- Analysis of the cause on troubles of polymer film products
There are many causes of troubles to be possible to occur on the film. They are assigned to the external factors and the internal factors. Foreign substances and surface contamination are the external factors, and segregation, aggregation and volatilization of additives as well as discoloration by chemical structure changes are the internal factors. We can propose the effective analyses to find out the causes of troubles from our abounding experiences.
- Physical property, composition and structure of amorphous IGZO thin film
IGZO has attracted attention as a transparent electrode material such as display applications. Its electrical properties changed by the film deposition conditions, a difference in composition and internal structure of the thin film is affected. The change of the composition and structure in the amorphous IGZO film can be measured by Raman spectroscopy, RBS and XAFS.
- Structural analysis of TAOS by various spectroscopy
Defects and coordination structure of the transparent amorphous oxide semiconductor typified by a-IGZO (TAOS), can be analyzed in detail by ESR, solid-state NMR, Raman and CL.
- Electronic states of a-In-Zn-O films analyzed by x-ray photoelectron and reflected electron energy loss spectroscopies
It is important to investigate the electronic states of transparent conductive oxide (TCO) films to acquire the directions for electrical property control and device development. In this study, we investigated the electronic states of indium zinc oxide (IZO) films deposited under different oxygen flow ratios. The influence of oxygen flow ratios on the electrical properties of IZO films is discussed on the basis of the results obtained by electron spectroscopies.
- u-RBS/HFS Composition and Density Analysis in Micro Region
New focusing method for MeV ion beam has been developed, and this leads to the application of RBS / HFS analysis in 100mm square (m-RBS / HFS). This method will give you accurate composition and depth profile in specific area, which is useful for evaluation of thin films in devices, antireflection layer in solar cell, etc.
- Characterizations of poly-silicon for Active Matrix Displays
Poly-silicon (p-Si) is used for active matrix LCDs and OLEDs since it has a high electron mobility. Here we show some examples of p-Si analyses by EBSD and D-SIMS, and we also present a simulated result of a cross-sectional carrier profiling of a p-Si TFT using SCM.