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Power Semiconductor

NanoSIMS elemental analysis for cross-section of SiC-MOSFET: The NanoSIMS 50L can provide the highest lateral resolution among secondary ion mass spectrometers and can simultaneously achieve high sensitivity and high mass resolution. Here, we introduce cross-section analysis of SiC-MOSFET using NanoSIMS and TEM-EDX. TechData_P02063E (PDF:287KB)
Characterization of defects generated by ion-implantation by cathodoluminescence: TechData_S00263E (PDF:235KB)
Evaluation of optical properties using spectroscopic ellipsometry: TechData_P01107E (PDF:389KB)
Failure Analysis Techniques for Semiconductor Devices: Physical and chemical analysis techniques are widely used for semiconductor failure analysis. The analysis of "invisible defects" is becoming important because of the requirement of high-level reliability. TechData_P00989E (PDF:365KB)
Electrical Characterisation of materials by Mercury Probe Capacitance Voltage Measurement (MCV): TechData_T00134E (PDF:198KB)
Depth profiling of carrier density in SiC epi-wafer by MCV: TechData_T00137E (PDF:378KB)
Measurement of water diffusion into sealing layer: For evaluation of water sealing layer, we provide water diffusion measurement service using heavy water (D₂O) treatment and Secondary Ion Mass Spectrometry (SIMS). This service is applicable to organic sealing layer also. TechData_P01138E (PDF:265KB)
SRA: Spreading Resistance Analysis (Two-Point Probe system): Spreading Resistance Analysis (SRA) is a technique used to analyze resistivity versus depth in semiconducting samples as a function of position. Two metal probes spaced about 20μm apart are pressed against the bevel surface of the semiconductor and the resistance between these probes is measured. TechData_P00413E (PDF:1,014KB)
Stress characterization by Raman spectroscopy: TechData_S00262E (PDF:131KB)
Evaluation of the interfacial structure of a SiO₂ thin film on a Si substrate: The physical and chemical structure at the interface of SiO₂ thin films is known to be closely related to the electrical properties of semiconductor devices. We can provide various analytical techniques (AFM, EPR, FT-IR, TEM-EELS, etc.) for the evaluation at the interface between SiO₂ and Si substrate. TechData_P01140E (PDF:537KB)
Depth profiling of impurities in the small patterned Si by highly sensitive TOF-SIMS: We measured the depth profiling of impurities in the small area of 15 μm or less than 10 μm width, using highly sensitive TOF-SIMS. TOF-SIMS is a powerful technique to be able to obtain some information about the depth profiling of impurities in the small patterned Si devices. TechData_P01266E (PDF:614KB)
Imaging and Depth Profiling of SiC-MOSFET by NanoSIMS 50L: 3D imaging of SiC-MOSFET was obtained by NanoSIMS 50L, which is a secondary ion mass spectrometer with high lateral resolution and sensitivity. Depth profile of ROI (region of interest) extracted from the 3D image shows a large dynamic range of n-type dopant of phosphorus. TechData_P01892E (PDF:353KB)
Analysis of Semi-conductor devices by NanoSIMS and TOF-SIMS: TOF-SIMS with etching ion gun enables depth profiling at an area less than 5 μm. NanoSIMS can be utilized for imaging with high lateral resolution of 100 nm with high sensitivity and high mass resolution. Both SIMSs have enough potential for dopant measurement at a small area. TechData_P01617E (PDF:1,022KB)
Dopant evaluation in 4 H-SiC by Backside SIMS: Backside SIMS is known as a useful technique to reduce the degradation of the depth resolution. Here, we show an example of the depth profiling of Al in 4H-SiC by back-side SIMS. TechData_P01099E (PDF:203KB)
NanoSIMS Analysis of Cross-Section for SiC-MOSFET: The NanoSIMS 50L can provide the highest lateral resolution among secondary ion mass spectrometers and can simultaneously achieve high sensitivity and high mass resolution. Here, we introduce examples of measuring cross-section of SiC-MOSFET using NanoSIMS. TechData_P02030E (PDF:528KB)
Evaluation of Temperature-dependent Stress in GaN HEMTs by Raman Spectroscopy: We evaluated the temperature-dependent stress in GaN HEMTs. The compressive stress in the GaN layer increased, as the temperature increased. The soldering prosess affected the stress in the GaN layer. The stress evaluation by Raman spectroscopy can be used for the optimization of packaging. TechData_P01976E (PDF:375KB)
Crystal structure characterization of Ga₂O₃ epitaxial layer using TEM: Gallium Oxide (Ga₂O₃) is an attractive wide-band-gap semiconductor material for a next-generation power semiconductor device. Quality of the epitaxial growth film is very important to realize high-performance power device. By transmission electron microscope (TEM), the crystal structure of Ga₂O₃ epitaxial layer on sapphire substrates can be characterized. TechData_P01814E (PDF:882KB)
Strain Analysis at nano-meter region using ASTAR: Information about crystal strain can be extracted from the spatial distribution of precession electron diffraction (PED) patterns. 2-dimensional strain maps with nano-meter spatial resolution using ASTAR in TEM are shown below. TechData_P01985E (PDF:289KB)