Articles 2016

2016/12

Journal Title Author
Polymer 109, 307-314 (2017) Melting and recrystallization kinetics of poly(butylene terephthalate) Yoshitomo Furushima, Sadanori Kumazawa1, Hideyuki Umetsu1, Akihiko Toda2, Evgeny Zhuravlev3 and Christoph Schick3
(1: Toray Industries, Inc., 2: Hiroshima University, 3: University of Rostock)

2016/11

Microscopy 65, i32 (2016) Three-dimensional Observations of Unstained Polymer Materials Using Energy Dispersive X-ray Tomography Shin Inamoto, Akiyo Yoshida, Naoto Kaneko and Yuji Otsuka

2016/9

Journal of Applied Physics 120, 095301 (2016) Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light Hirofumi Seki, Hideki Hashimoto and Yukihiro Ozaki1
(1: Kwansei Gakuin University)

2016/7

ACS Photonics 3, 1654-1661 (2016) Extinction and Scattering Properties of High-Order Surface Plasmon Modes in Silver Nanoparticles Probed by Combined Spatially Resolved Electron Energy Loss Spectroscopy and Cathodoluminescence Naohiko Kawasaki, Sophie Meuret1, Raphaël Weil1, Hugo Lourenço-Martins1, Odile Stéphan1 and Mathieu Kociak1
(1: CNRS, Université Paris-Sud)
J. Polym. Sci. Part B: Polym. Phys 54, 2126-2138 (2016) Two Crystal Populations with Different Melting/Reorganization Kinetics of Isothermally Crystallized Polyamide 6 Yoshitomo Furushima, Masaru Nakada, Kazuhiko Ishikiriyama, Akihiko Toda1, Rene Androsch2, Evgeny Zhuravlev3, Christoph Schick3
(1: Hiroshima University, 2: Martin Luther University, Germany, 3: University of Rostock, Germany)
Applied Spectroscopy 71, 911-918 (2017) Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy Hirofumi Seki, Masanobu Yoshikawa, Takuma Kobayashi1, Tsunenobu Kimoto1 and Yukihiro Ozaki2
(1: Kyoto University, 2: Kwansei Gakuin University)
Polymer 99, 97-104 (2016) Quantitative understanding of two distinct melting kinetics of an isothermally crystallized poly(ether ether ketone) Yoshitomo Furushima , Akihiko Toda1, Vincent Rousseaux2, Christian Bailly2, Evgeny Zhuravlev3 and Christoph Schick3
(1: Hiroshima University, 2: Universite Catholique de Louvain, 3: University of Rostock)

2016/5

Applied Spectroscopy 70, 1209-1213 (2016) Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method Masanobu Yoshikawa, Kenichi Kosaka, Hirohumi Seki and Tsunenobu Kimoto1
(1: Kyoto University)

2016/4

Journal of Vacuum Science & Technology B 34, 03H134 (2016)  New sample preparation method using room-temperature direct bonding in backside SIMS analysis Seishi Akahori, Taichi Suda, Ryu Suzuki, Junichiro Sameshima and Masanobu Yoshikawa

2016/2

Japanese Journal of Applied Physics 55, 04ER03 (2016) Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence Ryuichi Sugie, Tomoyuki Uchida, Kenichi Kosaka and Koji Matsumura
Electronic Device Failure Analysis 18, 14-20 (2016) 3-D Analysis of a Copper Flip-Chip Interconnection Using FIB-SEM Slice and View Mototaka Ito, Jun Kato