Articles
2019/5
Journal | Title | Author |
---|---|---|
Journal of Materials Science: Materials in Electronics 30, 10848-10856 (2019) | 3D imaging of backside metallization of SiC-SBD influenced by annealing | Junichiro Sameshima, Toru Sugahara1, Toshiyuki Ishina1, Shijo Nagao1 and Katsuaki Suganuma1 (1: Institute of Scientific and Industrial Research, Osaka University) |
2019/4
Applied Physics Express 12, 051007 (2019) | Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H-SiC p-i-n diodes | Shohei Hayashi, Tamotsu Yamashita1, Junji Senzaki1, Tomohisa Kato1, Yoshiyuki Yonezawa1, Kazutoshi Kojima1 and Hajime Okumura1 (1: AIST) |
Surf Interface Anal. 51, 743-753 (2019) | Optimization of the depth resolution for profiling SiO2/SiC interfaces by dual‐beam TOF‐SIMS combined with etching | Junichiro Sameshima, Aya Takenaka, Yuichi Muraji, Shingo Ogawa, Masanobu Yoshikawa and Katsuaki Suganuma1 (1: Osaka Univercity) |
2019/2
JJAP Conf. Proc. 7, 011205 (2018) | Subnanopore Structural Change of Time-elapsed Silica PECVD Films Elucidated by Slow Positron Annihilation and Ellipsometric Porosimetry | Shigeru Yoshimoto, Kenji Ito1, Hiroyuki Hosomi, Masaaki Takeda and Toshinori Tsuru2 (1: AIST, 2: Hiroshima University) |