List of Papers - 2016
Under the guiding principle of "Contributing to the society through advanced technologies", we have continuously continued technological development since our foundation. We publish the results of pursuing "ultra cutting edge science and technology", such as the development of new analytical techniques, devising pretreatment techniques, and application and development to various device fields, at academic conferences and papers.
  • "Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light"
    H. Seki,H. Hashimoto and Y. Ozaki
    Journal of Applied Physics, 120, 095301 (2016).
  • "Three-dimensional Observations of Unstained Polymer Materials Using Energy Dispersive X-ray Tomography."
    Shin Inamoto, Akiyo Yoshida, Naoto Kaneko and Yuji Otsuka.
    Microscopy, 65, S1, i32,(2016)
  • "Two Crystal Populations with Different Melting/Reorganization Kinetics of Isothermally Crystallized Polyamide 6"
    Yoshitomo Furushima, Masaru Nakada, Kazuhiko Ishikiriyama, Akihiko Toda1, Rene Androsch2, Evgeny Zhuravlev3, Christoph Schick3 (1:Hiroshima University, 2:Martin Luther University, 3:University of Rostock)
    Journal of Polymer Science Part B: Polymer Physics 54, 2126 (2016).
  • "Quantitative understanding of two distinct melting kinetics of an isothermally crystallized polymer"
    Yoshitomo Furushima , Akihiko Toda1,Vincent Rousseaux2, Christian Bailly2, Evgeny Zhuravlev3, Christoph Schick3 (1:Hiroshima University, 2:Universite Catholique de Louvain, 3:University of Rostock)
    Polymer 99, 97 (2016).
  • "Extinction and Scattering Properties of High-Order Surface Plasmon Modes in Silver Nanoparticles Probed by Combined Spatially Resolved Electron Energy Loss Spectroscopy and Cathodoluminescence"
    Naohiko Kawasaki, Sophie Meuret1, Raphaël Weil1, Hugo Lourenço-Martins1, Odile Stéphan1, and Mathieu Kociak1
    (1:CNRS, Université Paris-Sud)
    ACS Photonics 3, 1654 (2016).
  • "New sample preparation method using room-temperature direct bonding in backside SIMS analysis"
    Seishi Akahori, Taichi Suda, Ryu Suzuki, Junichiro Sameshima, and Masanobu Yoshikawa
    Journal of Vacuum Science & Technology B 34, 03H134 (2016)
  • "Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence"
    R. Sugie, T. Uchida, K. Kosaka, and K. Matsumura
    Japanese Journal of Applied Physics 55, 04ER03 (2016).
  • "3-D Analysis of a Copper Flip-Chip Interconnection Using FIB-SEM Slice and View"
    Mototaka Ito
  • "Stress Characterization of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method"
    Masanobu Yoshikawa, Kenichi Kosaka, Hirohumi Seki, and Tsunenobu Kimoto
    Applied Spectroscopy, 70(7), 1209 (2016).