Analysis Solutions for Semiconductor Manufacturing Process

  • process improvement
  • reliability
  • quality control
  • trouble
  • defect inspection and failure analysis

We can provide “Analysis solutions” by using our technologies of semiconductor. Our strength lies in our technology and experience accumulated over our history of 40 years. We have developed our unique analytical technologies to meet the demands of changing times through continuous innovation.

Customer’s Benefits
  • Technical information for Silicon Carbide (SiC) for power device.
    Technical Documents
    Characterization of stress, carrier concentration, and defects in SiC MOSFET
    There are several issues about high-power SiC devices such as (1) reliability of gate oxide, (2) quality of SiC epitaxial film, (3) optimization of ion implantation, (4) packaging technology. These problems can be solved using scanning capacitance microscopy (SCM), cathodoluminescence (CL), Raman spectroscopy, and Fourier transform infrared spectroscopy (FT-IR).
    NanoSIMS elemental analysis for cross-section of SiC-MOSFET
    The NanoSIMS 50L can provide the highest lateral resolution among secondary ion mass spectrometers and can simultaneously achieve high sensitivity and high mass resolution. Here, we introduce cross-section analysis of SiC-MOSFET using NanoSIMS and TEM-EDX.
    Failure analysis of SiC power device package
    In failure analysis of semiconductor package, it is important to presume a failure part by nondestructive inspection method. For power devices generating a large amount of heat, it is effective to presume from the change in heat dissipation property before and after the failure. For example, a defect in the solder layer can be detected.
  • Technical information for Galium Nitride (GaN) for power device.
    Technical Documents
    Analysis of Power semiconductor device using STEM
    By scanning transmission electron microscopy(STEM), the crystal structure, elemental composition at the GaN epitaxial layer of GaN-HEMT and the p-n junction in Si epitaxial layer of Si-MOSFET can be characterized.
    Defect observation by highly-sensitive photoluminescence (PL) imaging
    We developed photoluminescence (PL) imaging system mainly for compound semiconductors by introducing highly sensitive CCD camera and optimizing illumination and detection system. Artifacts were drastically decreased and became highly sensitive to defects. It is especially suitable for low luminescent materials.
    Evaluation of Temperature-Dependent Stress in GaN HEMT by Raman spectroscopy
    We evaluated the temperature-dependent stress in GaN HEMTs. The compressive stress in the GaN layer increased, as the temperature increased. The soldering process affected the stress in the GaN layer. The stress evaluation by Raman spectroscopy can be used for the optimization of packaging.
    Visualization of damage and stress in GaN HEMT via cross-sectional cathodoluminescence
    Wide bandgap semiconductors still include many defects. Killer defects are also generated during device fabrication such as ion implantation and dry etching. Cross-sectional cathodoluminescence (CL) is sensitive to the process damages and can be used for process optimization and failure analysis.
  • Technical information for Next-generation Semiconductors (Ga2O3,SCAM,etc.).
    Technical Documents
    Structural characterization of a Ga2O3 epitaxial layer grown on a sapphire substrate
    Ga2O3, one of wide-band-gap semiconductor materials, is attracting attention as a next-generation power semiconductor. Since Ga2O3 is a polymorphic crystal, it is difficult to identify the crystal structure precisely using conventional cross-sectional TEM observation. We introduce an example of crystal structure analysis of Ga2O3 film by the combination of cross-sectional TEM and atomic resolution plan-view STEM.
    Comprehensive of ion implantation process for Ga2O3
    Ga2O3, one of wide-band-gap semiconductor materials, is attracting attention as a next-generation power semiconductor. Since ion implantation process is important in device fabrication, we evaluated the dopant activation process and the crystal defect caused by ion implantation.
    Physical property measurement of ScAlMgO4(SCAM) crystal
    ScAlMgO4(SCAM) has been expecting as sapphire alternative substrate material of light emitting element such as LED, because of small lattice mismatch for GaN. We introduce results of thermal and mechanical property measurement required for device design.
Ion implantation , Anneal​ Gate dielectric film & Electrode formation​