Ion Implantation
- Distribution of Impurities in semi-conductor device by NanoSIMS
- NanoSIMS is specialized technique for imaging with high lateral resolution of ～50-200nm with high sensitivity. Furthermore, depth profiling can also be conducted using primary beam with higher current density enough to sputter up to an interested depth of sample. TechData_P01813E (PDF:424KB)
- Characterization of defects generated by ion-implantation by cathodoluminescence
- TechData_S00263E (PDF:235KB)
- Ion Implantation Services in TRC
- Aluminum, Beryllium, Iron, Copper and Potassium are new lineups. TechData_P01247E (PDF:353KB)
- Low beam energy Ion Implantation
- TechData_T00150E (PDF:251KB)