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Ion Implantation

Distribution of Impurities in semi-conductor device by NanoSIMS
NanoSIMS is specialized technique for imaging with high lateral resolution of ~50-200nm with high sensitivity. Furthermore, depth profiling can also be conducted using primary beam with higher current density enough to sputter up to an interested depth of sample. TechData_P01813E (PDF:424KB)
Characterization of defects generated by ion-implantation by cathodoluminescence
TechData_S00263E (PDF:235KB)
Ion Implantation Services in TRC
Aluminum, Beryllium, Iron, Copper and Potassium are new lineups. TechData_P01247E (PDF:353KB)
Low beam energy Ion Implantation
TechData_T00150E (PDF:251KB)
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