Compound Semiconductor

Characterization of threading dislocations in GaN single crystal
TechData_S00260E (PDF:243KB)
Defect evaluation of SiC wafers by PL imaging
TechData_S00264E (PDF:1,454KB)
Characterization of SiO2/SiC Interface in SiO2 Films on 4H-SiC Substrate by GD-OES
TechData_P01097E (PDF:142KB)
Depth profiles and Imaging of impurities on LED epitaxial layers by TOF-SIMS
TechData_P01100E (PDF:195KB)
Depth profiles of impurities in the Semi-conductor material by TOF-SIMS
TechData_P01139E (PDF:500KB)
Dopant evaluation in 4H-SiC by Backside SIMS
TechData_P01099E (PDF:202KB)
Electrical Characterisation of materials by Mercury Probe Capacitance Voltage Measurement (MCV)
TechData_T00134E (PDF:198KB)
Depth profiling of carrier density in SiC epi-wafer by MCV
TechData_T00137E (PDF:378KB)
High sensitivity depth profiling of H, C and O in III-V compound semi-conductor by specialized TOF-SIMS
TechData_P01240E (PDF:188KB)
SIMS Analysis of Dopants in GaN LED
TechData_P01083E (PDF:147KB)
High sensitivity analysis of impurities in SiC semi-conductor by TOF-SIMS
TechData_P01259E (PDF:748KB)