Papers

2019/5

Journal Title Author
Journal of Materials Science: Materials in Electronics 30, 10848-10856 (2019) 3D imaging of backside metallization of SiC-SBD influenced by annealing Junichiro Sameshima, Toru Sugahara1, Toshiyuki Ishina1, Shijo Nagao1 and Katsuaki Suganuma1
(1: Institute of Scientific and Industrial Research, Osaka University)

2019/4

Applied Physics Express 12, 051007 (2019) Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H-SiC p-i-n diodes Shohei Hayashi, Tamotsu Yamashita1, Junji Senzaki1, Tomohisa Kato1, Yoshiyuki Yonezawa1, Kazutoshi Kojima1 and Hajime Okumura1
(1: AIST)
Surf Interface Anal. 51, 743-753 (2019) Optimization of the depth resolution for profiling SiO2/SiC interfaces by dual‐beam TOF‐SIMS combined with etching Junichiro Sameshima, Aya Takenaka, Yuichi Muraji, Shingo Ogawa, Masanobu Yoshikawa and Katsuaki Suganuma1
(1: Osaka Univercity)

2019/2

JJAP Conf. Proc. 7, 011205 (2018) Subnanopore Structural Change of Time-elapsed Silica PECVD Films Elucidated by Slow Positron Annihilation and Ellipsometric Porosimetry Shigeru Yoshimoto, Kenji Ito1, Hiroyuki Hosomi, Masaaki Takeda and Toshinori Tsuru2
(1: AIST, 2: Hiroshima University)