Aug. 1, 2018

European Conference on Silicon Carbide and Related Materials
(ECSCRM 2018)

3 Poster Presentations and Exhibition: Sep. 2 – Sep. 6, 2018
International Convention Centre, Birmingham, UK
Booth: A8

Poster Presentation :

  • Stress characterization of 4H-SiC epitaxial substrates by scanning near-field optical Raman microscope, with 250-nm spatial resolution
  • Atomic coordination analysis of nitrogen introduced in SiO2/SiC interface and SiO2 layer by XAFS measurement
  • Optimization of depth resolution on profiling of SiO2/SiC interface by dual-beam TOF-SIMS combined with etching